Graphene field effect transistors and their applications in terahertz technology: A review

BI Lu-qing; DAI Song-song; WU Yang-bing; GUO Dong-hui

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Article Navigation > New Carbon Mater. > 2018 > 33(6): 493-509

BI Lu-qing, DAI Song-song, WU Yang-bing, GUO Dong-hui. Graphene field effect transistors and their applications in terahertz technology: A review. New Carbon Mater., 2018, 33(6): 493-509.

Citation:

BI Lu-qing, DAI Song-song, WU Yang-bing, GUO Dong-hui. Graphene field effect transistors and their applications in terahertz technology: A review. New Carbon Mater., 2018, 33(6): 493-509.

BI Lu-qing, DAI Song-song, WU Yang-bing, GUO Dong-hui. Graphene field effect transistors and their applications in terahertz technology: A review. New Carbon Mater., 2018, 33(6): 493-509.

Citation:

BI Lu-qing, DAI Song-song, WU Yang-bing, GUO Dong-hui. Graphene field effect transistors and their applications in terahertz technology: A review. New Carbon Mater., 2018, 33(6): 493-509.

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Graphene field effect transistors and their applications in terahertz technology: A review

1.
College of Electronic Science and Technology, Institute of Modern Vircuits and Systems, Xiamen University, Xiamen 361005, China;
2.
School of Electronics and Communication Engineering, Guangxi Colleges and Universities Key Laboratory of Complex System Optimization and Big Data Processing, Yulin Normal University, Yulin 537000, China

Funds: National Natural Science Foundation of China (61836010); Foundation of Guangxi Colleges and Universities Key Laboratory of Complex System Optimization and Big Data Processing (2017CSOBDP0103).

Received Date: 2018-08-01
Accepted Date: 2018-12-27
Rev Recd Date: 2018-10-30
Publish Date: 2018-12-28

Abstract

Abstract

Graphene-based field effect transistors (GFETs) have a higher charge mobility and a higher cut-off frequency than traditional silicon-based transistors and are also smaller. The symmetrical conical band structure of the graphene channel with no band gap and negative dynamic conductivity of graphene with optical pumping in the terahertz (THz) band make them widely applicable in THz function devices, which are low cost and compatible with current semiconductor technology. In this paper, the scaling challenges for silicon-based transistors are discussed, and the basic structure, fabrication process and the main characteristics (C-V and I-V) in the THz/RF region for GFETs and graphene nanoribbon FETs are reviewed. Their novel uses in terahertz technology such as a terahertz electronic injection laser, a FET terahertz detector, a broadband FET terahertz modulator and an oscillator are summarized.
- Graphene,
- Graphene field effect transistor,
- Negative dynamic conductivity,
- THz technology

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References(118)

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