A review of graphene synthesis at low temperatures by CVD methods
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摘要: 石墨烯是一种由sp2杂化碳原子组成的二维碳纳米材料。由于其特殊的性质，在世界范围内引起了广泛的关注和研究。化学气相沉积法（CVD）是制备石墨烯最有效、最常用的方法。然而，传统的CVD石墨烯生长温度非常高（1 000℃），这不仅使得石墨烯制备成本高，而且限制了其在某些领域的应用。因此，低温下石墨烯的合成是目前研究者关注的焦点。前驱体类型（气态、液态、固态）和衬底类型（过渡金属、合金、介质衬底）是影响石墨烯合成温度的重要因素。本文将从以上几个方面对低温条件下CVD合成石墨烯的研究结果进行综述。Abstract: Chemical vapor deposition (CVD) is the most effective method for the synthesis of large-scale and high-quality graphene. However, the growth temperature of graphene is high, about 1 000 ℃, using conventional CVD, meaning that it is expensive and thus limits the use of the material. The synthesis of CVD graphene at low temperatures (<600 ℃) is therefore the focus of many researchers. Recent research on the production of CVD graphene at low temperatures is reviewed. Comprehensive comparison, analysis and discussion of quality, number of layers, domain size and the uses of graphene synthesized at low temperatures using different precursors (gas, liquid and solids) and substrates (metals, metal alloys and dielectric materials) are given for different CVD methods (atmospheric pressure CVD, plasma enhanced CVD, catalyst-enhanced CVD, surface wave plasma CVD, microwave plasma CVD, radio frequency plasma enhanced CVD and electron cyclotron resonance CVD). The future prospects and challenges of preparing graphene at low temperatures are discussed.
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Key words:
- Graphene /
- Low temperature /
- CVD
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