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摘要: 根据金刚石厚膜的实际应用要求，建立了EA-CVD(Electron Assisted Chemical Vapor Deposition)方法，制备出直径为80mm，膜厚为1mm以上的大尺寸高品质的均匀金刚石厚膜，其膜厚不均匀性小于5%，热导率不均匀性小于10%，膜片中部和边缘磨耗比基本相同，大约在1.5×105左右。同时研究了制备参数对膜的品质和膜厚均匀性的影响。结果表明：甲烷浓度、工作气压、偏流、灯丝与基片间距等参数对金刚石厚膜的品质和膜厚均匀性都产生影响。辉光等离子体的状态对膜的均匀生长作用明显，较低的工作气压，较大的偏流和较大的灯丝与基片间距有利于气体分解和辉光等离子体的发散，从而导致大面积金刚石厚膜不同位置的品质和膜厚趋于均匀。Abstract: An electron assisted chemical vapor deposition (EA-CVD) method was used to synthesize a uniform diamond thick film. The factors that influence the uniformity of quality and thickness of diamond thick films are methane concentration, gas pressure, bias current and the distance between filament and substrate. Results show that state of the glow discharge plasma plays an important role in the uniformity of quality and thickness of the diamond films. A larger filament-substrate distance, bigger bias current and lower gas pressure in the reactor can improve the state of the glow discharge plasma, resulting in an optimized uniform diamond thick film with diameter of 80mm, thickness of 1mm, and with a non-uniformity of thickness and thermal conductivity less than 5% and 10%, respectively. The abrasiveness ratio, defined by the abrasive weight loss of a standard grinding wheel divided by the abrasive weight loss of the resultant diamond film, is about 1.5×105, which is same in the middle and edge of the sample.
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