氧化硅包覆单壁碳纳米管纳米电缆的制备

基金项目: 国家重大科学研究计划项目（2011CB932601）;国家自然科学基金项目（50921004, 51102242, 51272257）.

Synthesis of coaxial nanocables of single-walled carbon nanotubes sheathed with amorphous silicon oxide

Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China

Funds: State Key Program for Basic Research (2011CB932601); National Natural Science Foundation of China (50921004, 51102242, 51272257) .

摘要: 采用氢电弧放电法直接制备了无定形氧化硅包覆单壁碳纳米管同轴纳米电缆。纳米电缆的长度为几微米到数十微米，直径约为10～30nm。纳米电缆的外包覆层为无定形氧化硅，每根电缆的芯部包含1根到几根单壁碳纳米管。单壁碳纳米管具有较高的结晶度，其直径主要集中在2.2nm和1.8nm。基于实验研究结果，提出了一种纳米电缆的生长机制。所制备的无定形氧化硅包覆单壁碳纳米管纳米电缆可望用于场效应晶体管等纳电子器件的构建。
- 同轴纳米电缆 /
- 单壁碳纳米管 /
- 氧化硅 /
- 电弧放电
Abstract: Coaxial nanocables of single-walled carbon nanotubes (SWCNTs) sheathed with amorphous silicon oxide were directly synthesized by a hydrogen arc discharge method. As-prepared nanocables are usually tens of microns in length and about 10-30nm in diameter. The sheath of the nanocables is amorphous silicon oxide, while the core is high quality SWCNTs. Each cylinder-shaped nanocable contained one to several SWCNTs. The growth mechanism of the nanocables is proposed. These SWCNT/amorphous silicon oxide nanocables may have potential applications in field effect transistors and other related nanodevices.
- Coaxial nanocable /
- Single-walled carbon nanotube /
- Silicon oxide /
- Arc discharge method