微波法合成SiC纳米线及其光致发光性质

黄珊; 王继刚; 刘松; 张玥晨; 钱柳; 梁杰

微波法合成SiC纳米线及其光致发光性质

黄珊^1,2,
王继刚^1,2,3,,
刘松^1,2,
张玥晨¹,
钱柳¹,
梁杰¹

1.
东南大学材料科学与工程学院, 江苏省先进金属材料重点实验室, 江苏南京 211189;
2.
东南大学-张家港工业技术研究院, 江苏张家港 215628;
3.
西藏民族大学, 陕西咸阳 712082

基金项目: 新世纪优秀人才支持计划; 西藏自治区重点科技项目; 江苏省"青蓝工程"(NCET-12-0119);"六大人才高峰"(2013-JY-007).

详细信息

通讯作者:
王继刚,教授. E-mail: wangjigang@seu.edu.cn

中图分类号: TQ127.1⁺1
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出版历程
- 收稿日期: 2014-12-30
- 录用日期: 2015-09-07
- 修回日期: 2015-05-07
- 刊出日期: 2015-06-28

Structural characterization and photoluminescence properties of SiC nanowires prepared by microwave method

1.
Jiangsu Key Laboratory of Advanced Metallic Materials, School of Materials Science and Engineering, Southeast University, Nanjing 211189, China;
2.
Southeast University-Zhangjiagang Industry Technology Research Institute, Zhangjiagang 215628, China;
3.
Tibet university for Nationalities, Xianyang 712082, China

Funds: Program for New Century Excellent Talents in University; Key Project of Science and Technology of Tibet Autonomous Region; Qing-lan Project of Jiangsu Province (NECT-12-0119); Summit of the Six Top Talents Program of Jiangsu Province (2013-JY-007).

摘要

摘要: 以Si粉、SiO₂粉和人造石墨为原料,在1480℃、4kW、80min的真空微波辐照条件下快速高效地合成SiC纳米线。利用SEM、TEM、XRD等对所得产物的微观结构解析表明,在未使用催化剂的条件下,基于气固(VS)机制可成功制备出β型SiC。根据坩埚中的部位不同,所得SiC呈现出不同的形貌。坩埚上层的产物呈亮绿色,较为纯净,主要为直径约150nm的纳米棒,并含有部分微米级SiC晶粒,表面氧化迹象不明显。其余部分产物呈灰绿色,主要是直径为20~50nm的SiC/SiO₂同轴纳米线(表层的SiO₂厚度约2nm),并夹杂有未反应完全的石墨和SiO₂。利用波长为240nm的激发光分别对SiC纳米棒和同轴纳米线的光致发光特性的测试表明,两者均可观察到峰位在390nm左右的发射峰,此结果与所报道的β-SiC纳米材料的发光性能相比,蓝移程度更高。
- 微波法 /
- 碳化硅 /
- 纳米线 /
- 结构表征 /
- 光致发光
Abstract: SiC nanowires were synthesized by a microwave-heating method at 1480 ℃ for 80 min under vacuum, using silicon powder, silica dioxide powder and artificial graphite as raw materials. SEM, TEM and XRD were used to investigate the microstructure of the samples and excitation light with wavelength of 240 nm was used to test the photoluminescence properties of the products. Results indicated that β-SiC can be synthesized directly without using a catalyst by the vapor-solid growth mechanism. The samples exhibited different morphologies and sizes at different zones due to the temperature differences. The products in an upper crucible were bright-green, relatively pure SiC, consisting of mainly nano-rods with a diameter of about 150 nm and small amount of SiC micro-crystals, and surface oxidation was not obvious. The products in other zones were grey-green with lots of SiC/SiO₂ coaxial nanowires with a diameter around 20-50 nm and a SiO₂ surface layer of thickness about 2 nm, and there was also some un-reacted graphite and silica dioxide. Both the SiC nano-rods and SiC/SiO₂ coaxial nanowires exhibited a strong broad photoluminescence peak at a wavelength of about 390 nm and a high degree of blue-shift compared with the reported luminescence of β-SiC nano-materials.
- Microwave /
- SiC /
- Nanowires /
- Structural characterization /
- Photoluminescence

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