石墨烯场效应管及其在太赫兹技术中的应用

闭吕庆; 戴松松; 吴阳冰; 郭东辉

石墨烯场效应管及其在太赫兹技术中的应用

1.
厦门大学电子科学与技术学院, 现代电路与系统研究所, 福建厦门 361005;
2.
玉林师范学院电子与通信工程学院, 复杂系统优化与大数据处理广西高校重点实验室, 广西玉林 537000

基金项目: 国家自然科学基金（61836010）；复杂系统优化与大数据处理广西高校重点实验室科研课题（2017CSOBDP0103）.

详细信息

作者简介:
闭吕庆,博士,讲师.E-mail:bilvqing@stu.xmu.edu.cn

通讯作者:
郭东辉,博士,教授.E-mail:dhguo@xmu.edu.cn

中图分类号: TQ127.1⁺1
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- 文章访问数: 691
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- 被引次数: 0
出版历程
- 收稿日期: 2018-08-01
- 录用日期: 2018-12-27
- 修回日期: 2018-10-30
- 刊出日期: 2018-12-28

Graphene field effect transistors and their applications in terahertz technology: A review

1.
College of Electronic Science and Technology, Institute of Modern Vircuits and Systems, Xiamen University, Xiamen 361005, China;
2.
School of Electronics and Communication Engineering, Guangxi Colleges and Universities Key Laboratory of Complex System Optimization and Big Data Processing, Yulin Normal University, Yulin 537000, China

Funds: National Natural Science Foundation of China (61836010); Foundation of Guangxi Colleges and Universities Key Laboratory of Complex System Optimization and Big Data Processing (2017CSOBDP0103).

摘要

摘要: 石墨烯是单原子厚度的二维碳同素异形体材料，因其出色的电学、热学、光学及力学特性而被广泛应用于生物检测、医学、新能源、微电子、射频电路等领域。正是凭借着石墨烯独一无二的材料特性，石墨烯基场效应管（GFETs）比传统的硅基晶体管具有更高的迁移率、微缩空间及特征频率。此外，石墨烯零带隙的对称圆锥形能带结构，以及在受外部激发下形成的负电导率特性（太赫兹频段），使得GFETs能广泛应用于太赫兹功能器件中，也为实现太赫兹技术商业化提供了一种兼容当前半导体产业技术的低成本选择。针对硅基晶体管发展面临的尺度瓶颈，本文综述了GFETs器件的基本结构、射频/太赫兹领域的主要特性以及制备工艺，并举例说明了其在太赫兹技术领域的最新应用。
- 石墨烯 /
- 石墨烯场效应管 /
- 负动态电导率特性 /
- 太赫兹技术
Abstract: Graphene-based field effect transistors (GFETs) have a higher charge mobility and a higher cut-off frequency than traditional silicon-based transistors and are also smaller. The symmetrical conical band structure of the graphene channel with no band gap and negative dynamic conductivity of graphene with optical pumping in the terahertz (THz) band make them widely applicable in THz function devices, which are low cost and compatible with current semiconductor technology. In this paper, the scaling challenges for silicon-based transistors are discussed, and the basic structure, fabrication process and the main characteristics (C-V and I-V) in the THz/RF region for GFETs and graphene nanoribbon FETs are reviewed. Their novel uses in terahertz technology such as a terahertz electronic injection laser, a FET terahertz detector, a broadband FET terahertz modulator and an oscillator are summarized.
- Graphene /
- Graphene field effect transistor /
- Negative dynamic conductivity /
- THz technology

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