Synthesis, morphology and structure of CVD graphene produced by a slit method
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摘要: 控制石墨烯成核密度和石墨烯层数一直是生长单晶石墨烯的重要问题。本文采用一种改进的化学气相沉积法，在中压状态下（5.5 Torr），以自制石墨模具（狭缝）为生长石墨烯的反应容器，制备出了成核密度低的单层石墨烯。利用扫描电镜和拉曼光谱仪对石墨烯的形貌和结构进行了表征，并研究了在1 253 K时以甲烷为碳源，不同沉积时间对石墨烯形貌的影响。结果表明，在VCH4∶VH2=1∶15、沉积时间为20 min条件下获得单层石墨烯。随着沉积时间的延长，获得的石墨烯尺寸变大，但层数增多。Abstract: The control of the graphene nucleation density and the number of graphene layers is important for the synthesis of single crystal graphene. Graphene was prepared by an improved chemical vapor deposition (CVD) method on a Cu foil substrate inside a slit in a graphite rod that was a close fit to the silica tube reactor in an oven under a low pressure of 5.5 Torr. The reactor was first heated to 1 273 K at a heating rate of 278 K/min under a flow of a gas mixture of H2 and Ar (1:5) and annealed for 35 min. Then, a gas mixture of CH4 and H2 (1:15) was introduced into the reactor for graphene deposition for different times. Finally, the reactor was cooled to room temperature at a rate of 323 K/min under a flow of the gas mixture of H2 and Ar (1:5). Results indicate that a low nucleation density was achieved by this method, resulting in graphene with a low defect density. Single-layer graphene was obtained for a deposition time of 20 min. The longer the deposition time, the larger the size, and the more the number of graphene layers.
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Key words:
- Graphene /
- Chemical vapor deposition (CVD) /
- Slit /
- Graphene flake nucleation density /
- Morphology
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