基于碳纳米管背电极的晶体硅太阳能电池

张泽麟; 赵珂; 崔贤; 姚有为; 韦进全

基于碳纳米管背电极的晶体硅太阳能电池

1.
清华大学材料学院, 教育部先进成型制造重点实验室, 新型陶瓷与精细工艺国家重点实验室, 北京 100084;
2.
清华大学深圳研究生院, 先进材料研究所, 广东深圳 518055

基金项目: 深圳珈伟光照明股份有限公司横向课题（20142001042）.

详细信息

作者简介:
张泽麟,硕士研究生.E-mail:zhangzl13@126.com

通讯作者:
韦进全,副研究员.E-mail:jqwei@tsinghua.edu.cn

中图分类号: TQ127.1⁺1
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- 文章访问数: 423
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- 被引次数: 0
出版历程
- 收稿日期: 2019-01-03
- 录用日期: 2019-06-27
- 修回日期: 2019-04-05
- 刊出日期: 2019-06-28

A crystalline Si solar cell using a carbon nanotube thin film as the back electrode

1.
Key Lab for Advanced Materials Processing Technology of Education Ministry;State Key Lab of New Ceramic and Fine Processing;School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;
2.
Institute of Advanced Materials, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055, China

Funds: Shenzhen Jiawei Photovol taic Lighting Co., Ltd. (20142001042).

摘要

摘要: 碳纳米管（CNTs）具有优异的电学与光电性能，可用作太阳能电池的空穴传输材料。本文将CNTs薄膜置于晶体硅（c-Si）太阳能电池的背面，以取代铝背电极，构成c-Si/CNTs太阳能电池。c-Si/CNTs太阳能电池的短路电流密度可达35.5 mA·cm^-2，比刷涂铝背极c-Si电池的高8%。表明CNTs具有很强的空穴收集和输运能力，可用作c-Si太阳能电池的背电极。用稀氢氟酸（HF）处理c-Si/CNTs界面，放置100 h后，电池的填充因子由44.5%提高到62.6%，转换效率由7.1%提高到10.9%。
- 太阳能电池 /
- 碳纳米管 /
- 异质结 /
- 晶体硅
Abstract: Due to their outstanding charge collecting and transport ability, carbon nanotubes (CNTs) can be used as electrode materials in solar cells. Here, we replaced the aluminum back electrode in a crystalline silicon (c-Si) solar cell with a CNT thin film to form a c-Si/CNT film solar cell. The c-Si/CNT solar cell had a high short-circuit current density of 35.5 mA cm^-2, which is higher than that using aluminum as the back electrode, indicating that CNTs can be used as hole transport materials in silicon-based solar cells. The power conversion efficiency of the c-Si/CNT solar cell was increased from 7.1% to 10.9% by dropping a few drops of a dilute HF solution (5 wt%) at the interface of the c-Si and the CNT film. This is because HF etches away the oxide layer on the c-Si surface, increases the interfacial contact area between the CNT film and the c-Si and decreases the recombination rate of electron/hole pairs.
- Solar cell /
- Carbon nanotubes /
- Heterojunction /
- Crystalline silicon

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参考文献(20)

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