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单壁碳纳米管-石墨烯杂化材料的自组装及其电学性能

Prashanta Dhoj Adhikari Yong-hun Ko Daesung Jung Chung-Yun Park

Prashanta Dhoj Adhikari, Yong-hun Ko, Daesung Jung, Chung-Yun Park. 单壁碳纳米管-石墨烯杂化材料的自组装及其电学性能. 新型炭材料, 2015, 30(4): 342-348. doi: 10.1016/S1872-5805(15)60193-7
引用本文: Prashanta Dhoj Adhikari, Yong-hun Ko, Daesung Jung, Chung-Yun Park. 单壁碳纳米管-石墨烯杂化材料的自组装及其电学性能. 新型炭材料, 2015, 30(4): 342-348. doi: 10.1016/S1872-5805(15)60193-7
Prashanta Dhoj Adhikari, Yong-hun Ko, Daesung Jung, Chung-Yun Park. Single-wall carbon nanotube hybridized graphene films: self assembly and electrical properties. New Carbon Mater., 2015, 30(4): 342-348. doi: 10.1016/S1872-5805(15)60193-7
Citation: Prashanta Dhoj Adhikari, Yong-hun Ko, Daesung Jung, Chung-Yun Park. Single-wall carbon nanotube hybridized graphene films: self assembly and electrical properties. New Carbon Mater., 2015, 30(4): 342-348. doi: 10.1016/S1872-5805(15)60193-7

单壁碳纳米管-石墨烯杂化材料的自组装及其电学性能

doi: 10.1016/S1872-5805(15)60193-7
详细信息
    作者简介:

    Prashanta Dhoj Adhikari.E-mail:dhoj2@yahoo.com

    通讯作者:

    Chung-Yun Park.E-mail:cypark@skku.edu

  • 中图分类号: TB332

Single-wall carbon nanotube hybridized graphene films: self assembly and electrical properties

  • 摘要: 以Si为基底,采用气相沉积法制备出石墨烯(G/Si)薄膜。将含1%APTES的苯溶液与G/Si密封,在115 ℃下加热2 h,G薄膜上自组装单层APTES膜(SAM-G/Si)。将SAM-G/Si浸渍于酸处理后的单壁碳纳米管氯仿液中,45 ℃干燥即得到单壁碳纳米管-石墨烯杂化材料(SWCNT-G/Si)。结果表明,具有p-型电学性能的G/Si经表面改性后呈现出n-型性能,电容性能得到提高。
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出版历程
  • 收稿日期:  2015-03-10
  • 录用日期:  2015-09-07
  • 修回日期:  2015-08-05
  • 刊出日期:  2015-08-28

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