石墨烯基电子学中的平面异质结研究进展

刘俊江; 李锐杰; 李杭; 李贻非; 易俊何; 王海成; 赵晓冲; 刘培植; 郭俊杰; 刘磊

doi:10.1016/S1872-5805(18)60352-X

石墨烯基电子学中的平面异质结研究进展

doi: 10.1016/S1872-5805(18)60352-X

1.
太原理工大学新材料界面科学与工程教育部重点实验室, 山西太原 030024;
2.
北京大学工学院材料科学与工程系, 北京 100871;
3.
北京科技大学国家材料服役安全科学中心, 北京 100083;
4.
中国工程物理研究院材料研究所, 四川江油 621908

详细信息

作者简介:
刘俊江,李锐杰为共同第一作者.

通讯作者:
郭俊杰,教授.E-mail:guojunjie@tyut.edu.cn;刘磊,研究员.E-mail:leiliu1@pku.edu.cn

中图分类号: TQ127.1⁺1
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- 被引次数: 0
出版历程
- 收稿日期: 2018-10-26
- 录用日期: 2018-12-27
- 修回日期: 2018-12-02
- 刊出日期: 2018-12-28

Graphene-based in-plane heterostructures for atomically thin electronics

1.
Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China;
2.
Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China;
3.
National Center for Materials Service Safety, University of Science and Technology Beijing, Beijing 100083, China;
4.
Institute of Materials, Chinese Academy of Engineering Physics, Jiangyou 621908, China

摘要

摘要: 二维平面晶体，由于能带结构的多样性和与半导体平面工艺兼容的特点，被认为在电子学中是延续摩尔定律的候选材料之一；同时它具备易转移、光学透明、能带可调等特点，在柔性电子学和光电子学方面展示出巨大的潜在应用。将电路所需的具有不同导电性能的二维材料在平面内实现空间上的可控集成，是实现单原子层二维电子学的首要问题。综述了最近在石墨烯基电子学中平面异质结的研究进展，包括石墨烯-绝缘体和石墨烯-半导体异质结，集中在可控制备、对界面结构的原子尺度研究、以及逻辑功能原型器件研究。最后简述当前该领域面临的挑战和研究前景。
- 石墨烯 /
- 面内异质结 /
- 界面结构 /
- 场效应晶体管 /
- 逻辑器件
Abstract: Two-dimensional materials are promising for use in atomically thin electronics, optoelectronics and flexible electronics because of their versatile band structures, optical transparency, easy transfer to a substrate and compatibility with current technology for integrated circuits. Three key components of contemporary integrated circuits, metals, insulators and semiconductors, have analogues in two-dimensional materials, i.e., graphene, boron nitride (BN) and transition metal dichalcogenides (TMDCs), respectively. Their controlled integration in a single layer is essential for achieving completely two-dimensional devices. In this review, we briefly describe the latest advances in graphene-based planar heterostructures, in graphene-BN, and in graphene-TMDC heterojunctions, focusing on the fabrication methods, the interfacial structure characteristics at the atomic scale and the properties of prototype electronic devices. The challenges and prospects in this field are also discussed.
- Graphene /
- In-plane heterostructure /
- Interface structure /
- Field-effect transistor /
- Logic device

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