CO<sub>2</sub>活化对聚硅氧烷裂解SiC衍生炭孔结构的影响

段力群; 马青松; 马林建; 董璐; 王波; 代晓青; 张波

doi:10.1016/S1872-5805(19)60019-3

CO₂活化对聚硅氧烷裂解SiC衍生炭孔结构的影响

doi: 10.1016/S1872-5805(19)60019-3

1.
陆军工程大学爆炸冲击防灾减灾国家重点实验室, 江苏南京 210007;
2.
国防科技大学新型陶瓷纤维及其复合材料国防科技重点实验室, 湖南长沙 410073

基金项目: 江苏省自然科学基金（BK20170754）.

详细信息

作者简介:
段力群,博士.E-mail:850082427@qq.com

通讯作者:
马青松,研究员.E-mail:nudtmqs1975@163.com

中图分类号: TQ127.1⁺1
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- 被引次数: 0
出版历程
- 收稿日期: 2019-04-29
- 录用日期: 2019-09-10
- 修回日期: 2019-06-30
- 刊出日期: 2019-08-28

Effect of the CO₂ activation parameters on the pore structure of silicon carbide-derived carbons

1.
State Key Laboratory of Disaster Prevention & Mitigation of Explosion & Impact, Army Engineering University of PLA, Nanjing 210007, China;
2.
Science and Technology on Advanced Ceramic Fibers & Composites Laboratory, National University of Defense Technology, Changsha 410073, China

Funds: Natural Foundation of Jiangsu Province, China(BK20170754).

摘要

摘要: 经聚硅氧烷裂解转化得到碳化硅粉体，然后对其进行氯化处理得到炭，再通过CO₂活化处理得到具有高比表面积（1 316.8~1 929.0 m²·g^-1）的微孔炭（SiC-DC）材料。研究了CO₂活化温度、时间对SiC衍生多孔炭结构的影响。采用氮气吸附法、X-ray衍射光谱（XRD）、扫描电镜（SEM）及透射电镜（TEM）等技术对SiC-DC样品微观结构随活化温度、时间演变进行表征分析。结果表明，CO₂活化处理可以有效调控SiC-DC的孔结构，而对其结晶性影响很小，且活化处理后样品保持着SiC粉体或未活化SiC-DC样品的原有形态和微观结构（如石墨带）。对于已活化SiC-DC样品，比表面积（SSA）、总孔容（V_tot）及微孔孔容都随活化温度、时间增加而增加，但同时活化产率逐渐降低。相比未活化样品，SiC-DC在950℃条件下活化处理2 h后，SSA和V_tot值分别增加了46.5%、86.4%，主要原因是经活化处理，微孔孔容明显增加。
- 聚硅氧烷 /
- 碳化硅 /
- 碳化硅衍生碳 /
- 孔结构 /
- CO₂活化
Abstract: A silicon carbide derived carbon (SiC-DC) with a high specific surface area (SSA) fabricated by chlorination of a silicon carbide derived from polysiloxane was activated by CO₂. The effect of activation temperature and time on the microstructure of the activated samples was investigated by N₂ sorption, XRD, SEM and TEM. Results showed that CO₂ activation effectively changed the pore structure of the SiC-DC and had little impact on carbon crystallinity. The activated samples retained the morphology of the SiC powder or the non-activated SiC-DC. The SSA, total pore volume (Vtot) and micropore volume of the activated SiC-DCs all increased and the yield decreased with increasing activation temperature or time. The SSA and Vtot increased by 46.5% (from 1 316.8 to 1 929.0 m²·g^-1) and 86.4% (from 0.560 to 1.044 cm³·g^-1), respectively after the SiC-DC was activated at 950℃ for 2 h, mainly as a result of the increased micropore volume.
- Polysiloxane /
- Silicon carbide /
- Carbide derived carbon /
- Pore structure /
- CO₂ activation

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