Flexible and lightweight graphene grown by rapid thermal processing chemical vapor deposition for thermal management in consumer electronics
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摘要: 下一代电子产品的飞速发展对热管理提出了更高的要求。初始石墨烯的导热性是铜的13倍。本文通过快速热处理化学气相沉积(RTP-CVD)法制备了具有大sp2结构域的单层、双层和多层石墨烯(SLG、BLG、FLG)，进一步通过低浓度H2还原制备了高导热石墨烯。在1 000 °C下生长25 min制备出SLG，利用拉曼光谱和透射电子显微镜(TEM)研究了石墨烯的品质。为了验证RTP-CVD法生成的石墨烯的散热能力，将其作为2TB固态硬盘的散热器，通过红外热成像仪进行了研究。结果证明，RTP-CVD生长的石墨烯用于消费电子产品的热管理测试时性能表现优异。SLG显示温度(最高)比商用铜散热器低5 °C，SLG的散热能力比商用铜散热器快200倍左右。综上，利用RTP-CVD法制备的轻质的柔性石墨烯可以成为下一代5G设备和消费电子产品热管理的更好选择。Abstract: Next-generation consumer electronics require excellent thermal management. Graphene is a good choice because its thermal conductivity is 13 times that of copper. Single-, bi- and few-layer graphene (SLG, BLG, FLG) with large sp2 domains were grown by rapid thermal processing chemical vapor deposition (RTP-CVD) from CH4 and H2 using Ar as the diluting gas. The quality of graphene was investigated by Raman spectroscopy and TEM. To demonstrate the heat dissipation capability of RTP-CVD-grown graphene, a 2 TB solid state drive was used and the temperature was measured by a FLIR thermal camera. Results indicate that high thermal conductivity graphene was prepared by diluting the precursor gas with Ar. SLG was prepared at a growth temperature of 1 000 °C and a time of 25 min. A transition from FLG to high-quality BLG was observed at low H2 concentrations. Using SLG, there was a 5 °C lower temperature rise than using a commercial copper heat dissipator. The heat dissipation ability of SLG was approximately 200 times that of commercial copper heat dissipators.
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Key words:
- Graphene /
- Thermal management /
- Consumer electronics /
- Chemical vapour deposition
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Figure 2. (a) The schematic representation of chemisorption/deposition of graphene on copper foil. Stage-I: dissociative dehydrogenation of CH4, Stage-II: dimerization, Stage-III & Stage-IV: trimerization and migration, and Stage-V: growth of graphene. FE-SEM images of (b) Ar-70, (c) Ar-80 and (d) Ar-100 samples
Figure 3. (a) Stacked Raman spectra of Ar-70, Ar-80 and Ar-100 with the I2D/IG ratio. (b, c, d) G-band (ωG), 2D-band (ω2D), and native oxide Raman spectra for Ar-70. (e, g) and (f, h) is the G- and 2D-band spectra for Ar-80 and Ar-100, respectively. The G-band position, 2D-band position, and FWHM (ωFWHM) are in cm−1
Figure 4. Two-dimensional plots of Raman mapping of (a, d, g) G-band, (b, e, h) 2D-band, and (c, f, i) I2D/IG ratio for Ar-70, Ar-80 and Ar-100, respectively
Figure 5. (a, b) High-resolution TEM images, (c) schematic of graphene lattice with defects, and (d) SAED pattern of Ar-70. (e, f) High-resolution TEM images, (g) schematic of graphene lattice with defects, and (h) SAED pattern of Ar-80. (i, j) High-resolution TEM images, (k) BLG edges, and (l) SAED pattern of Ar-100
Figure 6. High-resolution XPS spectra of (a) C1s, (b) O1s of Ar-100 sample, (c) atomic percentage comparison of C1s, O1s, and Cu2p, and (d) spectra of Cu2p
Figure 8. (a) Photographs of 2 TB SSD (108 (L) mm×34 (w) mm×11.5 (H) mm) with RTP-CVD graphene and commercial aluminium heat sink. (b) Temperature versus time profile of various heat sinks. Demonstration photographs of (c) a thermal IR camera with SLG and (d) commercial copper heat sink
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