Preparation of nano-diamond films on GaN with a Si buffer layer

LIU Jin-long; TIAN Han-mei; CHEN Liang-xian; WEI Jun-jun; HEI Li-fu; LI Cheng-ming

doi:10.1016/S1872-5805(16)60029-X

Volume 31 Issue 5

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Article Navigation > New Carbon Mater. > 2016 > 31(5): 518-524

LIU Jin-long, TIAN Han-mei, CHEN Liang-xian, WEI Jun-jun, HEI Li-fu, LI Cheng-ming. Preparation of nano-diamond films on GaN with a Si buffer layer. New Carbon Mater., 2016, 31(5): 518-524. doi: 10.1016/S1872-5805(16)60029-X

Citation:

LIU Jin-long, TIAN Han-mei, CHEN Liang-xian, WEI Jun-jun, HEI Li-fu, LI Cheng-ming. Preparation of nano-diamond films on GaN with a Si buffer layer. New Carbon Mater., 2016, 31(5): 518-524. doi: 10.1016/S1872-5805(16)60029-X

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Preparation of nano-diamond films on GaN with a Si buffer layer

doi: 10.1016/S1872-5805(16)60029-X

Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China

Funds: National Natural Science Foundation of China (51402013, 51272024); China Postdoctoral Science Foundation (2014M550022);Fundamental Research Funds for the Central Universities (FRF-TP-15-052A2).

Received Date: 2016-06-29
Accepted Date: 2016-10-28
Rev Recd Date: 2016-10-12
Publish Date: 2016-10-28

Abstract

Abstract

Gallium nitride (GaN) has been widely used in electronic and optoelectronic devices because of its unique electrical properties. However, its low thermal conductivity and the high thermal boundary resistance at the interface between GaN and substrates such as Si and Al₂O₃ prevent efficient heat dissipation from the heated regions, which limits the further development of GaN-based high power devices. Diamond, with the highest thermal conductivity, has been considered to be one of the most promising heat sink materials. However, it is hard to prepare a diamond film on a GaN substrate because there is a high thermal expansion coefficient difference and also a large lattice mismatch between them. An approach to prepare a nano-diamond film on a GaN substrate by incorporating a Si buffer layer has been proposed. A GaN substrate decomposes significantly from 560 to 680℃ when exposed to ahydrogen plasma for 5 min and no adhesive nano-diamond film can be directly grown on it. This decomposition is significantly suppressed by the presence of a Si buffer layer and a nano-diamond film about 2 μm thick can be deposited on a GaN substrate by microwave chemical vapor deposition using CH₄ as the carbon source. With an optimum Si layer of 10 nm, the adhesive force between the nano-diamond film and the GaN substrate reaches 10N, which is ascribed to the complete conversion of the Si layer to a silicon carbidetransition layer during the deposition.
- GaN,
- Si buffer layer,
- Nano-diamond film,
- Direct growth,
- Decomposition

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References

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