The effect of adding Cu on the nitrogen removal efficiency of Ti for the synthesis of a large type IIa diamond under high temperature and high pressure

GUO Ming-ming; LI Shang-sheng; FENG Lu; HU Mei-hua; SU Tai-chao; GAO Guang-jin; WANG Jun-zhuo; YOU Yue; NIE Yuan

doi:10.1016/S1872-5805(20)60509-1

Volume 35 Issue 5

Turn off MathJax

Article Contents

Article Navigation > New Carbon Mater. > 2020 > 35(5): 559-566

GUO Ming-ming, LI Shang-sheng, FENG Lu, HU Mei-hua, SU Tai-chao, GAO Guang-jin, WANG Jun-zhuo, YOU Yue, NIE Yuan. The effect of adding Cu on the nitrogen removal efficiency of Ti for the synthesis of a large type IIa diamond under high temperature and high pressure. New Carbon Mater., 2020, 35(5): 559-566. doi: 10.1016/S1872-5805(20)60509-1

Citation:

GUO Ming-ming, LI Shang-sheng, FENG Lu, HU Mei-hua, SU Tai-chao, GAO Guang-jin, WANG Jun-zhuo, YOU Yue, NIE Yuan. The effect of adding Cu on the nitrogen removal efficiency of Ti for the synthesis of a large type IIa diamond under high temperature and high pressure. New Carbon Mater., 2020, 35(5): 559-566. doi: 10.1016/S1872-5805(20)60509-1

Citation:

GUO Ming-ming, LI Shang-sheng, FENG Lu, HU Mei-hua, SU Tai-chao, GAO Guang-jin, WANG Jun-zhuo, YOU Yue, NIE Yuan. The effect of adding Cu on the nitrogen removal efficiency of Ti for the synthesis of a large type IIa diamond under high temperature and high pressure. New Carbon Mater., 2020, 35(5): 559-566. doi: 10.1016/S1872-5805(20)60509-1

PDF( 11028 KB)

The effect of adding Cu on the nitrogen removal efficiency of Ti for the synthesis of a large type IIa diamond under high temperature and high pressure

doi: 10.1016/S1872-5805(20)60509-1

1.
Henan Key Laboratory of Materials on Deep-Earth Engineering, School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454003, China;
2.
Jiaozuo Engineering Technology Research Centre of Advanced Functional Materials Preparation under High Pressure, Jiaozuo 454000, China

Funds: Natural Science Foundation of Henan Province (182300410279 and 182300410248), Fundamental Research Funds for the Universities of Henan Province (NSFRF180408), Project for Key Science and Technology Research of Henan Province, China (182102210311), Training Plan of Young Key Teachers in Colleges and Universities of Henan Province (2018GGJS057), Program for Innovative Research Team (in Science and Technology) in the University of Henan Province (19IRTSTHN027), Key scientific research project in colleges and Universities of Henan Province, China (18A430017, 20B140009).

Received Date: 2020-03-01
Rev Recd Date: 2020-04-23
Publish Date: 2020-10-28

Abstract

Abstract

Large single crystal diamonds were synthesized using Ti/TiC and Cu as additives in the Fe₆₄Ni₃₆-C system under 5.6 GPa and at 1 543 K. The synthesized crystals were characterized by optical microscopy and infrared spectroscopy. Results show that both Ti and TiC react with N to form TiN and Ti (C_1-x,N_x), respectively, which leads to a poor nitrogen removal efficiency and a large number of inclusions and pits in the crystals. Co-doping Ti or TiC with Cu promotes the decomposition of TiC to release Ti, which improves the nitrogen removal efficiency, and thereby reduces the number of defects and inclusions in the diamond crystals. A high-quality type Ⅱa diamond crystal was optimally synthesized when the Ti/Cu contents were 1.70 wt.%/1.06 wt.% (Ti:Cu=4:2.5).
- High temperature and high pressure,
- Large diamond crystal,
- Type Ⅱa diamond,
- Nitrogen getter Ti/Cu

FullText(HTML)

References(24)

References

Bundy F P, Hall H T, Strong H M. Man-made diamonds[J]. Nature, 1955, 176(4471):51-55.

Wentorf R H. Diamond growth rates[J]. Journal of Physical Chemistry, 1971, 75(12):1833-1837.

Strong H M, Chrenko R M. Diamond growth rates and physical properties of laboratory-made diamond[J]. Journal of Physical Chemistry, 1971, 75(12):1838-1843.

Sumiya H, Toda N, Satoh S. Growth rate of high-quality large diamond crystals[J]. Journal of Crystal Growth, 2002, 237/239:1281-1285.

Palyanov Y N, Borzdov Y M, Khokhryakov A F, et al. Effect of nitrogen impurity on diamond crystal growth processes[J]. Crystal Growth & Design, 2010, 10(7):3169-3175.

Liu X B, Chen X, David J Singh, et al. Boron-oxygen complex yields n-type surface layer in semiconducting diamond[J]. Proceedings of the National Academy of Sciences of the United States of America, 2019, 116(16):7703-7711.

Han F, Li S S, Jia X F, et al. Inclusions in large diamond single crystals at different temperatures of synthesis[J]. Chinese Physics B, 2019, 28(2):028103-02810.

Guo M M, Li S S, Hu M H, et al. The growth characteristics of type Ⅱa large single crystal diamond with Ti/Cu as nitrogen getter in FeNi-C system[J]. Chinese Physics B, 2020, 29(1):018101-018106.

Blank V D, Kuznetsov M S, Nosukhin S A, et al. The influence of crystallization temperature and boron concentration in growth environment on its distribution in growth sectors of type Ⅱb diamond[J]. Diamond & Related Materials, 2007, 16(4):800-804.

Wang J Z, Li S S, Hu M H, et al. C₃H₆N₆ doping effect of synthetic diamond under high pressure and high temperature[J]. International Journal of Refractory Metals and Hard Materials, 2020, 87(10):5150-5156.

Fernández Lorenzo C, Araújo D, González Mañas M, et al. Multi-technique analysis of high quality HPHT diamond crystal[J]. Journal of Crystal Growth, 2012, 353(1):115-119.

Yu K P, Li S S, Yang Q, et al. Effects of phosphorus doping via Mn₃P₂ on diamond growth along the (100) surfaces[J]. CrystEngComm, 201921(10):6810-6819.

Sumiya H, Satoh S. High-pressure synthesis of high-purity diamond crystal[J].Diamond and Related Materials, 1996, 5(11):1359-1365.

Gong C S, Li S S, Zhang H R, et al. Study on synthesis and electrical properties of slab shape diamond crystals in FeNiMnCo-C-P system under HPHT[J]. International Journal of Refractory Metals and Hard Materials, 2017, 66(7):116-121.

Wang J K, Li S S, Yu K P, et al. Synthesis and characteristics of type Ib diamond doped with NiS as an additive[J]. Chinese Physics Letter, 201936(11):046101-046112.

Liang Z Z, Jia X P, Ma H A, et al. Synthesis of HPHT diamond containing high concentrations of nitrogen impurities using NaN₃ as dopant in metal-carbon system[J]. Diamond and Related Materials, 2005, 14(11-12):1932-1935.

Wang J Z, Li S S, Su T C, et al. Shape controlled growth for type Ib large diamond crystals[J]. Acta Physica Sinica, 2018, 67(11):168101-168107.

Neuser R D, Schertl H P, Logvinova A M, et al. An EBSD study of olivine inclusions in Siberian diamonds:Evidence for syngenetic growth[J]. Russian Geology and Geophysics, 201556(11):321-329.

Li S S, Zhang H, Su T C, et al. Different effect of NiMnCo or FeNiCo on the growth of type-Ⅱa large diamonds with Ti/Cu as nitrogen getter[J]. Chinese Physics B, 201726(12):458-462.

Li S S, Wang J K, Hu M H, et al. The first principle study and experimental of boron synergistic sulfur doping in diamond[J]. Materials Today Communications, 2020, 24(6):101021-101029.

Kanda H, Akaishi M, Yamaoka S. New catalysts for diamond growth under high pressure and high temperature[J].Applied Physics Letters, 1998, 65(6):784-786.

Li S S, Luo N, Li X L, et al. Effect of Ni₇₀Mn₂₅Co₅ or Fe₅₅Ni₂₉Co₁₆ on the growth of type-Ⅱa large diamonds with Al as nitrogen getter[J]. Advanced Materials Research, 2011266(15):89-92.

Huber P, Manova D, Mändl S, et al. Formation of TiN, TiC and TiCN by metal plasma immersion ion implantation and deposition[J]. Surface & Coatings Technology, 2003, 174(16):1243-1247.

Chen L X, Zhu P W, Ma H A, et al. Effects of copper-based alloy on the synthesis of single-crystal diamond[J]. Journal of Physics:Condensed Matter, 2002, 14(44):10957-10961.

Relative Articles

Supplements(0)

Cited By

Proportional views