DAI Xian-qi, SUN Yong-can, ZHAO Jian-hua, WEI Shu-yi. Effect of vacancies and Si-dopant on In adsorption on graphene. New Carbon Mater., 2011, 26(01): 46-51.
Citation:
DAI Xian-qi, SUN Yong-can, ZHAO Jian-hua, WEI Shu-yi. Effect of vacancies and Si-dopant on In adsorption on graphene. New Carbon Mater., 2011, 26(01): 46-51.
DAI Xian-qi, SUN Yong-can, ZHAO Jian-hua, WEI Shu-yi. Effect of vacancies and Si-dopant on In adsorption on graphene. New Carbon Mater., 2011, 26(01): 46-51.
Citation:
DAI Xian-qi, SUN Yong-can, ZHAO Jian-hua, WEI Shu-yi. Effect of vacancies and Si-dopant on In adsorption on graphene. New Carbon Mater., 2011, 26(01): 46-51.
College of Physics and Information Engineering, Henan Normal University, Xinxiang 453007, China
Funds:
National Natural Science Foundation of China (60476047) and Sponsored by Program for Science ＆ Technology Innovation Talents in Universities of Henan Province (2008HASTIT030).
DAI Xian-qi (1964-), male, Professor, Ph.D. Supervisor, engaged in research of Surface physics and nano-materials. Tel:+86-13503805825, E-mail: xqdai@hotmail.com
First-principles calculations were carried out to study the effect of vacancies and Si-dopant on indium (In) adsorption on graphene. It is demonstrated that a vacancy or a Si-dopant strengthens In adsorption on graphene. The effect of the vacancy is greater at low In coverage than that of Si impurity, owing to the fact that the vacancy provides more dangling bonds for In adsorption, which strengthens the interaction between the In atom and graphene. However, the Si impurity affects In adsorption on graphene stronger than that the vacancy does at high In coverage (i.e. 1/6).
DownLoad: