Structural characterization and photoluminescence properties of SiC nanowires prepared by microwave method

HUANG Shan; WANG Ji-gang; LIU Song; ZHANG Yue-chen; QIAN Liu; LIANG Jie

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Article Navigation > New Carbon Mater. > 2015 > 30(3): 230-235

HUANG Shan, WANG Ji-gang, LIU Song, ZHANG Yue-chen, QIAN Liu, LIANG Jie. Structural characterization and photoluminescence properties of SiC nanowires prepared by microwave method. New Carbon Mater., 2015, 30(3): 230-235.

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Structural characterization and photoluminescence properties of SiC nanowires prepared by microwave method

1.
Jiangsu Key Laboratory of Advanced Metallic Materials, School of Materials Science and Engineering, Southeast University, Nanjing 211189, China;
2.
Southeast University-Zhangjiagang Industry Technology Research Institute, Zhangjiagang 215628, China;
3.
Tibet university for Nationalities, Xianyang 712082, China

Funds: Program for New Century Excellent Talents in University; Key Project of Science and Technology of Tibet Autonomous Region; Qing-lan Project of Jiangsu Province (NECT-12-0119); Summit of the Six Top Talents Program of Jiangsu Province (2013-JY-007).

Received Date: 2014-12-30
Accepted Date: 2015-09-07
Rev Recd Date: 2015-05-07
Publish Date: 2015-06-28

Abstract

Abstract

SiC nanowires were synthesized by a microwave-heating method at 1480 ℃ for 80 min under vacuum, using silicon powder, silica dioxide powder and artificial graphite as raw materials. SEM, TEM and XRD were used to investigate the microstructure of the samples and excitation light with wavelength of 240 nm was used to test the photoluminescence properties of the products. Results indicated that β-SiC can be synthesized directly without using a catalyst by the vapor-solid growth mechanism. The samples exhibited different morphologies and sizes at different zones due to the temperature differences. The products in an upper crucible were bright-green, relatively pure SiC, consisting of mainly nano-rods with a diameter of about 150 nm and small amount of SiC micro-crystals, and surface oxidation was not obvious. The products in other zones were grey-green with lots of SiC/SiO₂ coaxial nanowires with a diameter around 20-50 nm and a SiO₂ surface layer of thickness about 2 nm, and there was also some un-reacted graphite and silica dioxide. Both the SiC nano-rods and SiC/SiO₂ coaxial nanowires exhibited a strong broad photoluminescence peak at a wavelength of about 390 nm and a high degree of blue-shift compared with the reported luminescence of β-SiC nano-materials.
- Microwave,
- SiC,
- Nanowires,
- Structural characterization,
- Photoluminescence

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References(21)

References

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