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Recent progress on controlling dislocation density and behavior during heteroepitaxial single crystal diamond growth

WANG Wei-hua WANG Yang SHU Guo-yang FANG Shi-shu HAN Jie-cai DAI Bing ZHU Jia-qi

王伟华, 王杨, 舒国阳, 房诗舒, 韩杰才, 代兵, 朱嘉琦. 单晶金刚石异质外延生长过程中的位错行为及其控制工艺研究进展[J]. 新型炭材料, 2021, 36(6): 1034-1048. doi: 10.1016/S1872-5805(21)60096-3
引用本文: 王伟华, 王杨, 舒国阳, 房诗舒, 韩杰才, 代兵, 朱嘉琦. 单晶金刚石异质外延生长过程中的位错行为及其控制工艺研究进展[J]. 新型炭材料, 2021, 36(6): 1034-1048. doi: 10.1016/S1872-5805(21)60096-3
WANG Wei-hua, WANG Yang, SHU Guo-yang, FANG Shi-shu, HAN Jie-cai, DAI Bing, ZHU Jia-qi. Recent progress on controlling dislocation density and behavior during heteroepitaxial single crystal diamond growth[J]. NEW CARBON MATERIALS, 2021, 36(6): 1034-1048. doi: 10.1016/S1872-5805(21)60096-3
Citation: WANG Wei-hua, WANG Yang, SHU Guo-yang, FANG Shi-shu, HAN Jie-cai, DAI Bing, ZHU Jia-qi. Recent progress on controlling dislocation density and behavior during heteroepitaxial single crystal diamond growth[J]. NEW CARBON MATERIALS, 2021, 36(6): 1034-1048. doi: 10.1016/S1872-5805(21)60096-3

单晶金刚石异质外延生长过程中的位错行为及其控制工艺研究进展

doi: 10.1016/S1872-5805(21)60096-3
基金项目: 国家重点研发计划项目(2020YFA0709700,2016YFE0201600),国家杰出青年基金项目(51625201),国家自然科学基金项目(52072087),广东省重点研发计划项目(2020B010169002)
详细信息
    通讯作者:

    代 兵,讲师. E-mail:daib@hit.edu.cn

    朱嘉琦,教授. E-mail:zhujq@hit.edu.cn

  • 中图分类号: TQ127.1+1

Recent progress on controlling dislocation density and behavior during heteroepitaxial single crystal diamond growth

More Information
  • 摘要: 位错是异质外延单晶金刚石合成过程中的重要线缺陷,而降低位错密度是金刚石在电子器件领域上应用的显著挑战。本文以降低Ir衬底上异质外延金刚石膜中位错密度为目标,首先对该过程中的位错产生、类型、表征等进行阐释,然后从理论与工艺相结合的角度总结了加剧位错反应(增加外延层厚度,偏轴衬底生长)、除去已有位错(横向外延过度生长,悬挂-横向外延生长,图形化形核生长)及其他方法(三维生长法、金属辅助终止法、采用金字塔型衬底法)在降低金刚石位错密度方面的最新进展,随后结合经典的大失配异质外延半导体体系降低位错的理论,提出了衬底图形化技术、超晶格缓冲层技术和柔性衬底技术等可通过抑制引入位错来进一步降低位错密度的研究方向,最后对本领域的发展现状和未来展望进行了总结。
  • FIG. 1033.  FIG. 1033.

    FIG. 1033.. 

    Figure  1.  Dislocation behaviors during diamond heteroepitaxy. (A) Lattice mismatch at the interface between diamond and iridium substrates[7]; (B) Diamond epitaxial growth on iridium substrates[26,29]; (C) Dislocation propagation and types at the interface from WBDF images[35]and (D) Dislocation density comparison between heteroepitaxial diamond and other single crystal diamonds[7]. Reprinted from Power Electronics Device Applications of Diamond Semiconductors, Diamond and Related Materials, Applied Physics Letters with permission from Elsevier, AIP Publishing.

    Figure  2.  Methods to reduce dislocation density and improve crystal quality and their underlying mechanisms. (A1) Increasing film thickness[37], (A2) Off-axis growth[35], (B1) ELO method[58], (B2) PENDEO-ELO method[58,65], (B3) PNG method[ 62], (C1) Substrate patterned method[73], (C2) Buffer method/virtual substrate[74] and (C3) Compliant substrate method[76]. Note: the dashed regions represent the future trend, and the solid boxes describe the reported methods. Reprinted from Applied Physics Letters, Physica Status Solidi (a) applications and materials science, Japanese Journal of Applied Physics with permission from AIP Publishing, John Wiley and Sons, The Japan Society of Applied Physics.

    Figure  3.  Other methods used to reduce dislocations during the homoepitaxial growth stage. (A) Three-dimensional growth method[68], (B) Metal-assisted termination method[69, 70], (C) The pyramid substrate method[71, 72]. Reprinted from Physica Status Solidi (a) applications and materials science, Applied Physics Letters, Diamond and Related Materials with permission from John Wiley and Sons, AIP Publishing, Elsevier.

    Figure  4.  Dislocation reduction and crystal quality improvement with diamond film thickness after adopting different methods. Note:A1:increasing the thickness;A2:off-axis substrate growth;B1:conventional ELO method;B2:PENDEO-ELO method;B3: Patterned nucleation growth.[26, 37,39,40, 60-66]

    Table  1.   Dislocation reduction and crystal quality improvement for different methods.

    SubstrateDiamond film
    thickness
    Dislocation
    reduction methods
    Etch pit densityRaman shiftFWHM of Raman
    characteristic peak
    Tilt(400)/
    Twsit(311)
    Refs.
    Ir/MgO75 μmWith PNG/1334.7 cm−1/0.14°/none[64]
    Ir/MgO80 nmWith PNG1010-11 cm−2///[63]
    5 μm109 cm−2
    Ir/MgO20 μmWith ELO/1332±1 cm−15 cm−1/[60]
    Ir/Al2O370 μmWith ELO7×107 cm−2///[51, 58, 65]
    2/10 μm/10 cm−1/ 5cm−1
    2/10 μmWithout ELO/15±1cm−1/15 cm−1
    Ir/MgO<12 μmWith PNG/1333 cm−12.73 cm−1/[62]
    <12 μmWithout PNG1334 cm−17.87 cm−1
    0~15 μm/10-20 cm−1
    >45 μm2.8 cm−1
    Ir/MgO100 μmGrid PNG///0.064°/0.043°[61]
    60 μmGrid PNG9×106 cm−21332 cm−11.9 cm−10.077°/0.082°
    Without Grid PNG108 cm−21334 cm−13.0-4.7 cm−10.17°/0.51°
    Heteroepitaxial
    diamond substrate
    300 μmlaser-pierced hole array growth
    similar with PNG
    6×105 cm−2///[66]
    Ir/YSZ/Si1.6 mmIncreasing film thickness4×107 cm−2//0.064°/0.12°[26]
    Ir/YSZ/Si0-1 mmIncreasing film thickness>1010cm−2-<108 cm−2/>10 cm−1-1.86 cm−1/[37]
    Ir/MgO50 μmIncreasing film thickness5×108 cm−2///[40]
    Ir/YSZ/Si4°-
    8° off-axis
    2.4-4 μmOff-axis growth//8 cm−1-11 cm−10.4°-0.6°/none[39]
    Ir/YSZ/Si4°
    off-axis
    [110]1.62 mmOff-axis growth1×108 cm−2-1×109 cm−2/1.52 cm−1-4.33 cm−1/[48]
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出版历程
  • 收稿日期:  2021-07-04
  • 修回日期:  2021-08-31
  • 网络出版日期:  2021-11-13
  • 刊出日期:  2021-12-01

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