快速热处理化学气相沉积法制备用于电子产品热管理的轻质柔性石墨烯

Flexible and lightweight graphene grown by rapid thermal processing chemical vapor deposition for thermal management in consumer electronics

  • 摘要: 下一代电子产品的飞速发展对热管理提出了更高的要求。初始石墨烯的导热性是铜的13倍。本文通过快速热处理化学气相沉积(RTP-CVD)法制备了具有大sp2结构域的单层、双层和多层石墨烯(SLG、BLG、FLG),进一步通过低浓度H2还原制备了高导热石墨烯。在1 000 °C下生长25 min制备出SLG,利用拉曼光谱和透射电子显微镜(TEM)研究了石墨烯的品质。为了验证RTP-CVD法生成的石墨烯的散热能力,将其作为2TB固态硬盘的散热器,通过红外热成像仪进行了研究。结果证明,RTP-CVD生长的石墨烯用于消费电子产品的热管理测试时性能表现优异。SLG显示温度(最高)比商用铜散热器低5 °C,SLG的散热能力比商用铜散热器快200倍左右。综上,利用RTP-CVD法制备的轻质的柔性石墨烯可以成为下一代5G设备和消费电子产品热管理的更好选择。

     

    Abstract: Next-generation consumer electronics require excellent thermal management. Graphene is a good choice because its thermal conductivity is 13 times that of copper. Single-, bi- and few-layer graphene (SLG, BLG, FLG) with large sp2 domains were grown by rapid thermal processing chemical vapor deposition (RTP-CVD) from CH4 and H2 using Ar as the diluting gas. The quality of graphene was investigated by Raman spectroscopy and TEM. To demonstrate the heat dissipation capability of RTP-CVD-grown graphene, a 2 TB solid state drive was used and the temperature was measured by a FLIR thermal camera. Results indicate that high thermal conductivity graphene was prepared by diluting the precursor gas with Ar. SLG was prepared at a growth temperature of 1 000 °C and a time of 25 min. A transition from FLG to high-quality BLG was observed at low H2 concentrations. Using SLG, there was a 5 °C lower temperature rise than using a commercial copper heat dissipator. The heat dissipation ability of SLG was approximately 200 times that of commercial copper heat dissipators.

     

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