Abstract:
A 2D numerical model was established for simulating the chemical vapor deposition (CVD) of carbon in a vertical reactor. A full multi-component diffusion model was proposed to describe the diffusion of the gas species. The effects of Ar, N
2 or H
2 carrier gases on the flow field, species concentration and deposition rate of pyrocarbon were investigated using C
3H
6 as the carbon source. Results show that H
2 improves the stability of the gas flow. The concentration distributions of CH
4, C
2H
2, C
2H
4 and C
6H
6 are uniform in H
2. The pyrocarbon deposition rate is lowered, but the uniformity of deposition is improved when H
2 is used as the carrier gas compared with N
2 or Ar. The simulation results agree well with the experimental ones.