微波法合成SiC纳米线及其光致发光性质

Structural characterization and photoluminescence properties of SiC nanowires prepared by microwave method

  • 摘要: 以Si粉、SiO2粉和人造石墨为原料,在1480℃、4kW、80min的真空微波辐照条件下快速高效地合成SiC纳米线。利用SEM、TEM、XRD等对所得产物的微观结构解析表明,在未使用催化剂的条件下,基于气固(VS)机制可成功制备出β型SiC。根据坩埚中的部位不同,所得SiC呈现出不同的形貌。坩埚上层的产物呈亮绿色,较为纯净,主要为直径约150nm的纳米棒,并含有部分微米级SiC晶粒,表面氧化迹象不明显。其余部分产物呈灰绿色,主要是直径为20~50nm的SiC/SiO2同轴纳米线(表层的SiO2厚度约2nm),并夹杂有未反应完全的石墨和SiO2。利用波长为240nm的激发光分别对SiC纳米棒和同轴纳米线的光致发光特性的测试表明,两者均可观察到峰位在390nm左右的发射峰,此结果与所报道的β-SiC纳米材料的发光性能相比,蓝移程度更高。

     

    Abstract: SiC nanowires were synthesized by a microwave-heating method at 1480 ℃ for 80 min under vacuum, using silicon powder, silica dioxide powder and artificial graphite as raw materials. SEM, TEM and XRD were used to investigate the microstructure of the samples and excitation light with wavelength of 240 nm was used to test the photoluminescence properties of the products. Results indicated that β-SiC can be synthesized directly without using a catalyst by the vapor-solid growth mechanism. The samples exhibited different morphologies and sizes at different zones due to the temperature differences. The products in an upper crucible were bright-green, relatively pure SiC, consisting of mainly nano-rods with a diameter of about 150 nm and small amount of SiC micro-crystals, and surface oxidation was not obvious. The products in other zones were grey-green with lots of SiC/SiO2 coaxial nanowires with a diameter around 20-50 nm and a SiO2 surface layer of thickness about 2 nm, and there was also some un-reacted graphite and silica dioxide. Both the SiC nano-rods and SiC/SiO2 coaxial nanowires exhibited a strong broad photoluminescence peak at a wavelength of about 390 nm and a high degree of blue-shift compared with the reported luminescence of β-SiC nano-materials.

     

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