基于化学掺杂的碳纳米管二极管

A diode based on a chemically-doped SWCNT

摘要: 本文制备了一种基于局部化学掺杂的单壁碳纳米管（SWCNT） p-i-n结二极管。在此器件中，单根SWCNT沟道的两端分别被掺杂成p型和n型，沟道中段保留为本征状态，从而在SWCNT中形成具有较强内建电场的p-i-n结，表现出二极管特性。所制二极管器件具有高的器件性能，其整流比可达10³数量级、反向饱和电流仅为23 pA。此外，简要探讨了该结构二极管的工作原理。

Abstract: Carbon nanotube p-n junction diodes are expected to be the building block of next generation integrated circuits. A p-i-n junction diode was prepared from a SWCNT with one end p-type doped, the other end n-type doped and the middle segment undoped. The p-type doping was performed using triethyloxonium hexachloroantimonate to form an air stable charge transfer complex (SWCNT⁺-SbCl₆^-) while polyethylene imine was used as an electron donor for the n-type doping. The device showed an excellent performance with a high rectification ratio of 10³ and a low reverse saturation current of 23 pA.