石墨烯对树莓组培苗生长发育影响

Effect of graphene on the growth and development of Raspberry tissue culture seedlings

  • 摘要: 以树莓继代组培苗为试材,研究了不同质量浓度的石墨烯对树莓组培苗的长势及其不定根发育的影响。采用激光粒度仪、扫描透射电子显微镜、透射电子显微镜、X射线光电子能谱仪及拉曼光谱仪对石墨烯进行表征。利用LA-S根系分析系统和扫描电子显微镜对组培苗的苗高、根长、根比表面积、分叉数、根尖数及根部微观形态进行系统表征,并确定树莓组培苗生长的最适石墨烯浓度。结果表明,随着石墨烯浓度的增加,树莓的苗高、根长、根尖数、根的比表面积均表现为先增加后减小的趋势。石墨烯最佳浓度为2 mg·L-1,组培苗的苗高是对照组的1.46倍,其根长、比表面积、根尖数及分叉数约为对照组的2倍。

     

    Abstract: Raspberry subcultured tissue seedlings were used as test materials for the effect of different concentrations of graphene on the growth of raspberry seedlings and the development of adventitious roots. The graphene was characterized by a laser particle size analyzer, STEM, TEM, XPS and Raman spectroscopy. A root analysis system and SEM were used to systematically characterize the seedling height, root length, root specific surface area, number of branches, number of root tips and root micromorphology, thus determining the optimum concentration of graphene for the growth of raspberry tissue culture seedlings. The results showed that with increasing graphene concentration, the seedling height, root length, root tip number and root specific surface area of the seedlings all showed a trend of first increasing and then decreasing. The optimum concentration of graphene was 2 mg·L-1, the seedling height of tissue culture seedlings was 1.46 times that of the control group, and the root length, specific surface area, number of root tips and their bifurcation number were about twice that of the control group.

     

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